MJW16010A - NPN Silicon Power Transistors

onsemi

Key Features

Collector.
Emitter Voltage.
VCEV = 1000 Vdc.
Fast Turn.
Off Times.
50 ns Inductive Fall Time.
100_C (Typ).
90 ns Inductive Crossover Time.
100_C (Typ).
900 ns Inductive Storage Time.
100_C (Typ).
100_C Performance Specified for: Reverse.
Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents.
Extended FBSOA Rating Using Ultra.

MJW16010A npn silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJW16010A
Manufacturer	onsemi
File Size	160.03 KB
Description	NPN Silicon Power Transistors
Datasheet	MJW16010A Datasheet

Full PDF Text Transcription for MJW16010A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MJW16010A. For precise diagrams, and layout, please refer to the original PDF.

ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits...

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ed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.

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