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RF Amplifier, N-Channel MMBF4416A
Features
• This Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) (Notes 1, 2)
Symbol
Parameter
Value
Unit
VDG VGS IGF TJ, TSTG
Drain−Gate Voltage
Gate−Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
35
V
−35
V
10
mA
−55 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150_C. 2. These are steady−state limits.
MMBF4416A Datasheet
