MTD2955E Description
MTD2955E Power Field Effect Transistor DPAK for Surface Mount P−Channel Enhancement−Mode Silicon Gate This advanced MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices...