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MTP75N05HD - Power MOSFET

Key Features

  • AGE (VOLTS) 12 10 8 6 4 2 0 Q3 0 25 50 QT, TOTAL GATE CHARGE (nC) Q1 QT VGS Q2 60 50 40 30 20 TJ = 25°C ID = 75 A 10 0 75 1000 VDS , DRAIN-TO-SOURCE.

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MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in www.DataSheet4U.com designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.