NCP58921 switch equivalent, gan power switch.
* 650 V 50 mW GaN HEMT with Integrated Driver
* 30 ns Typical Driver Propagation Delay
* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
* 2.75 mm C.
* Power Conversion
* High Power Density Power Supplies
* All Double−ended Topologies: Half−bridges, Full−bri.
Pin No. Pin Name
Function
Pin Description
1−10 DRAIN
GaN Power Switch Drain
Power path connection for the GaN Switch DRAIN
19−22, SOURCE 23−26
GaN Power Switch Source
Power path connection for the GaN Switch SOURCE
11
VDR
Driver clamp reg.
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