NCP58921 Datasheet - ON Semiconductor

NCP58921 GaN Power Switch

Pin No. Pin Name Function Pin Description 1 *10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19 *22, SOURCE 23 *26 GaN Power Switch Source Power path connection for the GaN Switch SOURCE 11 VDR Driver clamp regulator decoupling Connect .

DATA SHEET www.onsemi.com Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mW, 30 A, TQFN26 TQFN26 8x8, 0.8P CASE 518AG NCP58921 The NCP58921 integrates a high performance, high frequency, driver utilizing state of the art silicon technology and a 650 V, 50 mW Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si driver and power GaN HEMT switch provides superior p.

NCP58921 Features

* 650 V 50 mW GaN HEMT with Integrated Driver

* 30 ns Typical Driver Propagation Delay

* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances

* 2.75 mm Creepage Distance for Maximum Reliability

* Driver Capability Adjust Enables EMI Optimization under Hard Sw

NCP58921 Datasheet (550.44 KB)