NCP58922 Datasheet - ON Semiconductor

NCP58922 Enhanced Mode GaN Power Switch

Pin No. Pin Name Function Pin Description 1 *10 DRAIN GaN Power Switch Drain Power path connection for the GaN Switch DRAIN 19 *22, SOURCE 23 *26 GaN Power Switch Source Power path connection for the GaN Switch SOURCE 11 VDR Driver clamp regulator decoupling Connect .

Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mW, 18 A, TQFN26 NCP58922 The NCP58922 integrates a high performance, high frequency, Silicon (Si) driver and a 650 V, 78 mW Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful combination of the Si Driver and power GaN HEMT Switch provides superior performance compared to discrete solution GaN HEMT and external driver. The NCP58922 integrated implementation sign.

NCP58922 Features

* 650 V 78 mW GaN HEMT with Integrated Driver

* 30 ns Typical Driver Propagation Delay

* 8x8 mm TQFN26 Package Minimizes Parasitic Inductances

* 2.75 mm Creepage Distance for Maximum Reliability

* Driver Turn

* on Process is Adjustable via External Resis

NCP58922 Datasheet (550.50 KB)