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  ON Semiconductor Electronic Components Datasheet  

NTBL050N65S3H Datasheet

N-Channel MOSFET

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MOSFET - Power,
N‐Channel, SUPERFET) III,
FAST
650 V, 49 A, 50 mW
NTBL050N65S3H
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFAST III FAST MOSFET series helps
minimize various power systems and improve system efficiency. The
TOLL package offers improved thermal performance and excellent
switching performance thanks to Kelvin Source configuration and
lower parasitic source inductance. TOLL offers Moisture Sensitivity
Level 1 (MSL 1).
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 40 mW
Ultra Low Gate Charge (Typ. Qg = 98 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 909 pF)
100% Avalanche Tested
Kelvin Source Configuration and Low Parasitic Source Inductance
MSL1 Qualified
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
www.onsemi.com
V(BR)DSS
650 V
RDS(ON) MAX
50 mW @ 10 V
ID MAX
49 A
NChannel MOSFET
HPSOF8L
CASE 100DC
MARKING DIAGRAM
AYWWZZ
NTBL050
N65S3H
A
Y
WW
ZZ
NTBL050N65S3H
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
October, 2020 Rev. 0
Publication Order Number:
NTBL050N65S3H/D


  ON Semiconductor Electronic Components Datasheet  

NTBL050N65S3H Datasheet

N-Channel MOSFET

No Preview Available !

NTBL050N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
49
Continuous (TC = 100°C)
31
IDM
Drain Current
Pulsed (Note 1)
132
EAS
Single Pulsed Avalanche Energy (Note 2)
491
IAS
Avalanche Current (Note 2)
6.8
EAR
Repetitive Avalanche Energy (Note 1)
3.05
dv/dt
MOSFET dv/dt
120
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
305
W
2.44
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 6.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD £ 24.5 A, di/dt 100 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Steady State
RqJA
Thermal Resistance, Junction to Ambient, Steady State (Note 4)
4. Device on 1 in2, 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material.
Value
0.41
43
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Reel Size
Tape Width
Quantity
NTBL050N65S3H
NTBL050N65S3H
HPSOF8L
13” mm
24 mm
2000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Part Number NTBL050N65S3H
Description N-Channel MOSFET
Maker ON Semiconductor
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