NTD4963N Datasheet | onsemi

Features 30 V, 44 A, Single N- Channel, DPAK/IPAK - - - - - Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant http://onsemi. V(BR)DSS 30 V RDS(ON) MAX 9.6 m W @ 10 V 16 m W @ 4.5 V D ID MAX 44 A Applications - CPU Power Delivery - DC- DC Converters - Remended for High Side (Control) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Rq JA (Note 1) Power Dissipation Rq JA (Note 1) Continuous Drain Current Rq JA (Note 2) Power Dissipation Rq JA (Note 2) Continuous Drain Current Rq JC (Note 1) .. Power Dissipation Rq JC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmax Pkg TJ, TSTG IS d V/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 10.0 7.2 1.64 8.1 5.8 1.1 44 32 35.7 132 35 - 55 to +175 30 6.0 33.8 W A A °C A V/ns m J 4 Drain YWW 49 63NG W A W A 1 2 3 4 Unit V V A G S N- CHANNEL MOSFET 4 4 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 49 63NG 4 Drain YWW 49 63NG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source d V/dt Single Pulse Drain- to- Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 26 Apk, L = 0.1 m H, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y WW 4963N G = Year = Work Week = Device Code = Pb- Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended...