NTH4L060N090SC1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V

* Ultra Low Gate Charge (typ. QG(tot) = 87 nC)

* Low Effective Output Capacitance (typ. Coss = 113 pF)

* 100% UIL Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

NTH4L060N090SC1

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Sic mosfet.

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NTH4L060N090SC1 SiC MOSFET ON Semiconductor

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