Datasheet Summary
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 60 mohm, 900 V, M2, TO-247-4L
Features
- Typ. RDS(on) = 60 mW @ VGS = 15 V
Typ. RDS(on) = 43 mW @ VGS = 18 V
- Ultra Low Gate Charge (typ. QG(tot) = 87 nC)
- Low Effective Output Capacitance (typ. Coss = 113 pF)
- 100% UIL Tested
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC- DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage
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