NTH4L014N120M3P - SiC MOSFET

onsemi

Key Features

Typ. RDS(on) = 14 mW @ VGS = 18 V.
Low Switching Losses (Typ. EON 1308 mJ at 74 A, 800 V).
100% Avalanche Tested.
These Devices are RoHS Compliant Typical.

NTH4L014N120M3P sic mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NTH4L014N120M3P
Manufacturer	onsemi
File Size	308.65 KB
Description	SiC MOSFET
Datasheet	NTH4L014N120M3P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching Losses (Typ.