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NTH4L014N120M3P - SiC MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 14 mW @ VGS = 18 V.
  • Low Switching Losses (Typ. EON 1308 mJ at 74 A, 800 V).
  • 100% Avalanche Tested.
  • These Devices are RoHS Compliant Typical.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 mW @ VGS = 18 V • Low Switching Losses (Typ.
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