NTH4L014N120M3P Description
Silicon Carbide (SiC) MOSFET EliteSiC, 14 mohm, 1200 V, M3P, TO-247-4L NTH4L014N120M3P.
NTH4L014N120M3P Key Features
- Typ. RDS(on) = 14 mW @ VGS = 18 V
- Low Switching Losses (Typ. EON 1308 mJ at 74 A, 800 V)
- 100% Avalanche Tested
- These Devices are RoHS pliant