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NTHL080N120SC1 - 1200V SiC MOSFET

Key Features

  • Typ. RDS(on) = 80 mW.
  • Ultra Low Gate Charge (typ. QG(tot) = 56 nC).
  • Low Effective Output Capacitance (typ. Coss = 80 pF).
  • 100% UIL Tested.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L NTHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ.