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NTHL190N65S3HF Datasheet

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ON Semiconductor · NTHL190N65S3HF File Size : 516.47KB · 9 hits

Features and Benefits


• 700 V @ TJ = 150°C
• Typ. RDS(on) = 165 mW
• Ultra Low Gate Charge (Typ. Qg = 34 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 316 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
•.

NTHL190N65S3HF NTHL190N65S3HF NTHL190N65S3HF
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N-Channel
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MOSFET
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