Datasheet4U Logo Datasheet4U.com

NTMD3N08LR2 - Power MOSFET

Features

  • http://onsemi. com.
  • Ultra Low On.
  • Resistance Provides Higher Efficiency.
  • RDS(on) = 0.215 W, VGS = 10 V.
  • RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses Internal RG = 50 W Designed for Power Management Solutions in 42 V Automotive System.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NTMD3P03R2G Dual -30V P-ChanneI MOSFET UMW
NTMD3P03R2G Dual P-Channel 30V MOSFET VBsemi
NTM164M21 LCD ETC
NTM164M21C LCD ETC
NTM88H025S Tire pressure monitor sensor NXP

Other Datasheets by onsemi

Part Number Description
NTMD3P03 P-Channel Power MOSFET
NTMD3P03R2 Power MOSFET
NTMD2C02R2 Power MOSFET 2 Amps / 20 Volts
NTMD2P01R2 Power MOSFET
NTMD4102PR2 Trench Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package Features http://onsemi.com • Ultra Low On–Resistance Provides Higher Efficiency ♦ • • • • • • • • • • • RDS(on) = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses Internal RG = 50 W Designed for Power Management Solutions in 42 V Automotive System Applications IDSS and RDS(on) Specified at Elevated Temperature Avalanche Energy Specified Miniature SO–8 Surface Mount Package – Saves Board Space Mounting Information for SO–8 Package Provided 2.
Published: |