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NTMD5836NL - Power MOSFET

Key Features

  • Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant ID Max (Notes 1 and 2) 11 A G1 http://onsemi. com N.
  • Channel 1 D1 N.
  • Channel 2 D2 V(BR)DSS Channel 1 40 V RDS(on) Max 12 mW @ 10 V 16 mW @ 4.5 V G2 S1 S2 Channel 2 40 V 25 mW @ 10 V 30.8 mW @ 4.5 V 6.5 A 1. Surface.
  • mounted on FR4 board using 1 in sq pad size (Cu.

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NTMD5836NL Power MOSFET 40 V, Dual N−Channel, SOIC−8 Features • • • • • Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ID Max (Notes 1 and 2) 11 A G1 http://onsemi.com N−Channel 1 D1 N−Channel 2 D2 V(BR)DSS Channel 1 40 V RDS(on) Max 12 mW @ 10 V 16 mW @ 4.5 V G2 S1 S2 Channel 2 40 V 25 mW @ 10 V 30.8 mW @ 4.5 V 6.5 A 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2.