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NTR3162PT1G - Power MOSFET

Download the NTR3162PT1G datasheet PDF. This datasheet also covers the NTR3162P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low RDS(on) at Low Gate Voltage.
  • --0.3 V Low Threshold Voltage.
  • Fast Switching Speed.
  • This is a Pb--Free Device.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTR3162P_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by onsemi

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NTR3162PT3G Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NTR3162P Power MOSFET --20 V, --3.6 A, Single P--Channel, SOT--23 Features • Low RDS(on) at Low Gate Voltage • --0.3 V Low Threshold Voltage • Fast Switching Speed • This is a Pb--Free Device Applications • Battery Management • Load Switch in PWM • Battery Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) VDSS VGS ID PD IDM TJ, Tstg IS TL --20 V ±8 V --2.2 --1.6 A --3.6 0.