NVBG1000N170M1 Datasheet - ON Semiconductor

SiC MOSFET

* Typ. RDS(on) = 960 mW @ VGS = 20 V

* Ultra Low Gate Charge (QG(tot) = 14 nC)

* High Speed Switching with Low Capacitance (Coss = 11 pF)

* 100% Avalanche Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compli

NVBG1000N170M1

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Sic mosfet.

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NVBG1000N170M1 SiC MOSFET ON Semiconductor

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