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NVBG020N090SC1 Description

Silicon Carbide (SiC) MOSFET 20 mohm, 900 V, M2, D2PAK-7L NVBG020N090SC1.

NVBG020N090SC1 Key Features

  • Typ. RDS(on) = 20 mW @ VGS = 15 V
  • Typ. RDS(on) = 16 mW @ VGS = 18 V
  • Ultra Low Gate Charge (typ. QG(tot) = 200 nC)
  • Low Effective Output Capacitance (typ. Coss = 295 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Halide Free and RoHS pliant with exemption 7a