NVC080N120SC1 SiC MOSFET
• 1200 V @ TJ = 175°C
• Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• AEC−Q101 Qualifie.
• Automotive Traction Inverter
• Automotive DC−DC Converter for EV/HEV
DATA SHEET www.onsemi.com
V(BR)DSS 1200.
Image gallery
Download