Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, N-Channel
100 V, 4.0 mW
Features
- Typical RDS(on) = 3.2 mW at VGS = 10 V
- Typical Qg(tot) = 47 nC at VGS = 10 V
- AEC- Q101 Qualified
- RoHS pliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti- NiV- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2113
4953 × 2413 4933 ±15 × 2393 ±15 1114.8 × 1648.9, (1114.8 × 2205.8) × 3
385 × 535 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS004N10MCA
Package
Wafer Sawn on Foil
REMENDED STORAGE CONDITIONS
Temperature...