NVCR4LS1D3N08M7A
NVCR4LS1D3N08M7A is N-Channel Power MOSFET manufactured by onsemi.
MOSFET
- Power, N-Channel
80 V, 1.27 mW
Features
- Typical RDS(on) = 1.0 mW at VGS = 10 V
- Typical Qg(tot) = 172 nC at VGS = 10 V
- AEC- Q101 Qualified and PPAP Capable
- RoHS pliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti- NiV- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer sawn on UV Tape Bad dice identified in inking Gross Die Counts: 1001
6604 x 3683 6584 ± 30 x 3663 ± 30 6399.3 x 3452.6 343.1 x 477.5 101.6 ±19.1
DATA SHEET .onsemi.
ORDERING INFORMATION
Device NVCR4LS1D3N08M7A
Package
Wafer Sawn on Foil
REMENDED STORAGE CONDITIONS
Temperature...
