NVCR4LS1D3N08M7A Overview
MOSFET Power, N-Channel 80 V, 1.27 mW NVCR4LS1D3N08M7A.
NVCR4LS1D3N08M7A Key Features
- Typical RDS(on) = 1.0 mW at VGS = 10 V
- Typical Qg(tot) = 172 nC at VGS = 10 V
- AEC-Q101 Qualified and PPAP Capable
- RoHS pliant
- RDS(on)
- Accurate RDS(on), VSD test at die level are not feasible for this thin die as limited by the test contact precision atta
- Rev. 0
- 55 to +175