Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
30 V, 0.52 mW
Features
- Typical RDS(on) = 0.43 mW at VGS = 10 V
- Typical Qg(tot) = 139 nC at VGS = 10 V
- AEC- Q101 Qualified
- RoHS pliant
DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness
3683 x 3000 80 3462 x 2708 200 x 200 76.2
Gate: AlCu Source: Ti- NiV- Ag Drain: Ti- Ni- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Bad dice identified in Inking Gross Die Count: 2458
ORDERING INFORMATION
Device NVCW3SS0D5N03CLA
Package
Unsawn wafer on ring frame
REMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C 44% to 66%
The Chip is 100% Probed to...