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MOSFET – Power, N-Channel
80 V, 1.0 mW
NVCW4LS001N08HA
Features
• Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant
DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness
6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.6
Gate and Source : AlCu Drain : Ti−Ni−Ag (back side of die) Passivation : Polyimide Wafer Diameter : 8 inch Wafer Unsawn on UV Tape Bad dice identified in Inking Gross Die Count : 806
DIE DATA SHEET www.onsemi.
NVCW4LS001N08HA Datasheet
