NVCW4LS001N08HA
NVCW4LS001N08HA is N-Channel MOSFET manufactured by onsemi.
Features
- Typical RDS(on) = 0.82 m W at VGS = 10 V
- Typical Qg(tot) = 166 n C at VGS = 10 V
- AEC- Q101 Qualified
- Ro HS pliant
DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness
6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.6
Gate and Source : Al Cu Drain : Ti- Ni- Ag (back side of die) Passivation : Polyimide Wafer Diameter : 8 inch Wafer Unsawn on UV Tape Bad dice identified in Inking Gross Die Count : 806
DIE DATA SHEET .onsemi.
ORDERING INFORMATION
Device NVCW4LS001N08HA
Package
Unsawn Wafer on Ring Frame
REMENDED STORAGE CONDITIONS
Temperature
22 to 28°C
40% to 66%
ELECTRICAL CHARACTERISTICS The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C
Symbol
Parameter
Condition
Min. Typ. Max. Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250 m A, VGS = 0 V
- -
IDSS
Drain to Source Leakage Current
VDS = 80 V, VGS = 0 V
- -
10 m A
IGSS
Gate to Source Leakage Current
VGS = 20 V, VDS = 0 V
- -
100 n...
