NVCW3SS0D5N03CLA Datasheet | onsemi

Features - Typical RDS(on) = 0.43 m W at VGS = 10 V - Typical Qg(tot) = 139 n C at VGS = 10 V - AEC- Q101 Qualified - Ro HS pliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 3683 x 3000 80 3462 x 2708 200 x 200 76.2 Gate: Al Cu Source: Ti- Ni V- Ag Drain: Ti- Ni- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Bad dice identified in Inking Gross Die Count: 2458 ORDERING INFORMATION Device NVCW3SS0D5N03CLA Package Unsawn wafer on ring frame REMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 44% to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C Symbol Parameter Condition Min Typ Max Unit BVDSS Drain to Source Breakdown Voltage ID = 250 m A, VGS = 0 V - - IDSS Drain to Source Leakage Current VDS = 24 V, VGS = 0 V - - 1 m A IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V - - 100 n A VGS(th) Gate to Source Threshold...