Datasheet Summary
MOSFET
- Power, N-Channel
80 V, 1.0 mW
Features
- Typical RDS(on) = 0.82 mW at VGS = 10 V
- Typical Qg(tot) = 166 nC at VGS = 10 V
- AEC- Q101 Qualified
- RoHS pliant
DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness
6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.6
Gate and Source : AlCu Drain : Ti- Ni- Ag (back side of die) Passivation : Polyimide Wafer Diameter : 8 inch Wafer Unsawn on UV Tape Bad dice identified in Inking Gross Die Count : 806
DIE DATA SHEET .onsemi.
ORDERING INFORMATION
Device NVCW4LS001N08HA
Package
Unsawn Wafer on Ring Frame
REMENDED STORAGE CONDITIONS
Temperature
22 to 28°C
40% to...