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NVCW4LS001N08HA - N-Channel MOSFET

Key Features

  • Typical RDS(on) = 0.82 mW at VGS = 10 V.
  • Typical Qg(tot) = 166 nC at VGS = 10 V.
  • AEC.
  • Q101 Qualified.
  • RoHS Compliant.

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MOSFET – Power, N-Channel 80 V, 1.0 mW NVCW4LS001N08HA Features • Typical RDS(on) = 0.82 mW at VGS = 10 V • Typical Qg(tot) = 166 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Scribe Width Source Attach Area Gate Attach Area Die Thickness 6604 x 4445 80 (6362 x 2059) x 2 330 x 600 101.6 Gate and Source : AlCu Drain : Ti−Ni−Ag (back side of die) Passivation : Polyimide Wafer Diameter : 8 inch Wafer Unsawn on UV Tape Bad dice identified in Inking Gross Die Count : 806 DIE DATA SHEET www.onsemi.