NVH4L022N120M3S
NVH4L022N120M3S is SiC MOSFET manufactured by onsemi.
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET
- EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
Features
- Typ. RDS(on) = 22 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 137 nC)
- High Speed Switching with Low Capacitance (Coss = 146 pF)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- Automotive On Board Charger
- Automotive DC-DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 10/+22...
