| Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L NVH4L022N120M3S Features • Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 137 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fre... |
| Features |
• Typ. RDS(on) = 22 mW @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 137 nC) • High Speed Switching with Low Capacitance (Coss = 146 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • Automotive On... |
| Datasheet |
 NVH4L022N120M3S Datasheet 442.98KB |
