NVH4L080N120SC1 mosfet equivalent, sic mosfet.
* 1200 V @ TJ = 175°C
* Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% Avalanche Tested
* AEC−Q101 Q.
* Automotive Auxiliary Motor Drive
* Automotive On Board Charger
* Automotive DC−DC Converter for EV/HEV
DA.
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Con.
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