NVXK2KR80WDT
NVXK2KR80WDT is SiC manufactured by onsemi.
Features
- DIP Silicon Carbide Vienna Rectifier Power Module for On- board
Charger (OBC) for x EV Applications
- Creepage and Clearance per IEC60664- 1, IEC 60950- 1
- pact Design for Low Total Module Resistance
- Module Serialization for Full Traceability
- Lead Free, ROHS and UL94V- 0 pliant
- Automotive Qualified per AEC- Q101 and AQG324
Typical Applications
- Vienna PFC for On- Board Charger in x EV Applications
MAXIMUM RATINGS MOSFET (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- to- Source Voltage, TJ ≤ 175°C
Continuous Drain Current (Notes1, 2)
TC = 25°C
VDSS
+25/- 15
VGSop
+20/- 5
Power Dissipation (Note 1)
Pulsed Drain Current
TC = 25°C
(Note 3)
Single Pulse Surge
TC = 25°C,
IDSC
Drain Current Capability tp = 10 ms,
RG = 4.7 W
Operating Junction and Storage...
