* 4 mW / 1200 V M3S SiC MOSFET Half
* Bridge
* Si3N4 DBC
* Thermistor
* Pre
* Applied Thermal Interface Material (TIM)
* Press
* Fit Pins
* These Devices are Pb
* Free, Halide Free and are RoHS Compliant Typical Applications
NXH004P120M3F2PTNG Datasheet (2.20 MB)
NXH004P120M3F2PTNG
2.20 MB
Sic.
Silicon Carbide (SiC) Module EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC NXH004P120M3F2PT.
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