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NXH160T120L2Q2F2SG - IGBT

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ON Semiconductor

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NXH160T120L2Q2F2SG IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – NXH160T120L2Q2F2SG

Datasheet Details

Part number	NXH160T120L2Q2F2SG
Manufacturer	ON Semiconductor
File Size	366.35 KB
Description	IGBT
Datasheet	NXH160T120L2Q2F2SG Datasheet
Additional preview pages of the NXH160T120L2Q2F2SG datasheet.

Product details

Features

Split T.
type Neutral Point Clamped Three.
level Inverter Module.
1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 mJ.
600 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 mJ.
Baseplate.
Solderable Pins.
Thermistor Typical.

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Published: Aug 5, 2023 |