* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* Pb
* Free, Halogen Free/BFR Free and RoHS Compli
NXH600B100H4Q2F2SG Datasheet (1.73 MB)
NXH600B100H4Q2F2SG
1.73 MB
Si/sic hybrid module.
Si/SiC Hybrid Module EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B1.
📁 Related Datasheet
NXH600B100H4Q2F2S1G Si/SiC Hybrid Module (ON Semiconductor)
NXH600B100H4Q2F2SG-R Si/SiC Hybrid Module (ON Semiconductor)
NXH600B100H4Q2F2PG Si/SiC Hybrid Module (ON Semiconductor)
NXH600N100L4F5PG 3-Level NPC Inverter (ON Semiconductor)
NXH600N100L4F5SG 3-Level NPC Inverter (ON Semiconductor)
NXH003P120M3F2PTHG SiC (ON Semiconductor)
NXH004P120M3F2PTNG SiC (ON Semiconductor)
NXH006P120MNF2PTG SiC MOSFET (ON Semiconductor)
NXH008P120M3F1PG SiC MOSFET (ON Semiconductor)
NXH008P120M3F1PTG SiC MOSFET (ON Semiconductor)
