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NXH600B100H4Q2F2SG - Si/SiC Hybrid Module

Download the NXH600B100H4Q2F2SG datasheet PDF. This datasheet also covers the NXH600B100H4Q2F2PG variant, as both devices belong to the same si/sic hybrid module family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Extremely Efficient Trench with Field Stop Technology.
  • Low Switching Loss Reduces System Power Dissipation.
  • Module Design Offers High Power Density.
  • Low Inductive Layout.
  • Low Package Height.
  • Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NXH600B100H4Q2F2PG-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B100H4Q2F2SG, NXH600B100H4Q2F2SG-R The NXH600B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • Low Package Height • Pb−Free, Halogen Free/BFR Free and RoHS Compliant Typical Applications • Solar Inverters • Uninterruptable Power Supplies Systems DATA SHEET www.onsemi.