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FDD6630A - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS( ON) and fast switching speed.

DC/DC converter

Features

  • 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V.
  • Low gate charge (5nC typical).
  • Fast switching.
  • High performance trench technology for extremely low RDS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed Power Dissipation (Note 3) (Note 1a) (Note 1) (Note 1a) TJ, TSTG (Note 1b).

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Datasheet Details

Part number FDD6630A
Manufacturer ON Semiconductor
File Size 351.71 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD6630A Datasheet
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Full PDF Text Transcription

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FDD6630A FDD6630A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications • DC/DC converter • Motor drives Features • 21 A, 30 V RDS(ON) = 35 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.
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