FDD8870-F085
N-Channel PowerTrench® MOSFET
30V, 160A, 3.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A
• rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
EAS
Single Pulse Avalanche Energy (Note 2)
Power dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
©2013 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
D
G
S
Ratings
30
±20
160
150
21
Figure 4
690
160
1.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
0.94
100
52
oC/W
oC/W
oC/W
Publication Order Number:
FDD8870-F085/D
