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FDS6675BZ - P-Channel MOSFET

Description

POWERTRENCH process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

  • Max RDS(on) = 13 mW at VGS =.
  • 10 V, ID =.
  • 11 A.
  • Max RDS(on) = 21.8 mW at VGS =.
  • 4.5 V, ID =.
  • 9 A.
  • Extended VGS Range (.
  • 25 V) for Battery.

📥 Download Datasheet

Datasheet Details

Part number FDS6675BZ
Manufacturer onsemi
File Size 320.27 KB
Description P-Channel MOSFET
Datasheet download datasheet FDS6675BZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, POWERTRENCH) -30 V, -11 A, 13 mW FDS6675BZ Description This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 13 mW at VGS = −10 V, ID = −11 A • Max RDS(on) = 21.8 mW at VGS = −4.5 V, ID = −9 A • Extended VGS Range (−25 V) for Battery Applications • HBM ESD Protection Level of 5.
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