FDS6675BZ Datasheet - On Semiconductor

P-Channel MOSFET

* Max RDS(on) = 13 mW at VGS =

* 10 V, ID =

* 11 A

* Max RDS(on) = 21.8 mW at VGS =

* 4.5 V, ID =

* 9 A

* Extended VGS Range (

* 25 V) for Battery Applications

* HBM ESD Protection Level of 5.4 kV Typical (Note 3)

* High Perfo

FDS6675BZ

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P-channel mosfet.

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FDS6675BZ P-Channel MOSFET On Semiconductor

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