* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg
550 V 9A
1.5 Ω 4.84 nC
* Schematic a.
OSG50R1K5xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.
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