Datasheet4U Logo Datasheet4U.com

OSG55R092HF - N-Channel Power MOSFET

Description

OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for telecom and super charger applications.

VDS, min@Tjmax ID, pulse RDS(ON), max @ VGS=10 V Qg 600 V 120

📥 Download Datasheet

Datasheet Details

Part number OSG55R092HF
Manufacturer Oriental Semiconductor
File Size 716.35 KB
Description N-Channel Power MOSFET
Datasheet download datasheet OSG55R092HF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
OSG5DAA131A-12V 10mm 12V Resistor LED OptoSupply

Other Datasheets by Oriental Semiconductor

Part Number Description
OSG55R140FF N-Channel Power MOSFET
OSG55R140HF N-Channel Power MOSFET
OSG55R140PF N-Channel Power MOSFET
OSG55R140RF N-Channel Power MOSFET
OSG50R1K5AF N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
, OSG55R092HF Enhancement Mode N-Channel Power MOSFET  General Description OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 600 V 120 A 92 mΩ 38.
Published: |