* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg 600 V 120 A 92 mΩ 38.6 nC
* Schemati.

OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for telecom and super charger applications.
* VDS, min@Tjmax
* ID, pulse.

OSG55R140FF

OSG55R140HF

OSG55R140PF

OSG55R140RF

OSG50R1K5AF

OSG50R1K5DF

OSG50R1K5FF

OSG50R1K5PF

OSG5DAA131A-12V

OSG07N65A

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts