OSG55R140FF Datasheet | Oriental Semiconductor

Description OSG55R140x F use advanced Green MOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. - VDS, min@Tjmax - ID, pulse - RDS(ON), max @ VGS=10 V - Qg 600 V 69 A 140 mΩ 24.1 n C - Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT-TOP VIEW TO220F TO220 TO3P TO247 OSG55R140FF OSG55R140PF OSG55R140RF OSG55R140HF - Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Drain source voltage Gate source voltage Continuous drain current1), TC=25 ℃ Continuous drain current1), TC=100 ℃ Pulsed drain current2), TC=25 ℃ Power dissipation3) for TO220, TO3P, TO247 , TC=25 ℃ Power dissipation3) for TO220F , TC=25 ℃ Single pulsed avalanche energy4) MOSFET dv/dt ruggedness, VDS=0…400 V Reverse diode dv/dt, VDS=0…400 V, ISD≤ID Operation and storage temperature Symbol VDS VGS ID, pulse EAS dv/dt dv/dt Tstg，Tj Value 550 ±30 23 14.5 69 151 59.5 330 50 15 -55 to 150 Unit V V W m J V/ns V/ns ℃ Oriental Semiconductor © Copyright reserved 2019 V1.0 2 / 12 , OSG55R140FF, OSG55R140PF, OSG55R140RF, OSG55R140HF Enhancement Mode N-Channel Power MOSFET - Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient Symbol RθJC...