OSG55R092HF - N-Channel Power MOSFET
OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.
This device is suitable for telecom and super charger applications.
* VDS, min@Tjmax * ID, pulse * RDS(ON), max @ VGS=10 V * Qg 600 V 120
