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OSG55R092HF N-Channel Power MOSFET

OSG55R092HF Description

, OSG55R092HF Enhancement Mode N-Channel Power MOSFET * General .
OSG55R092HF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

OSG55R092HF Applications

* VDS, min@Tjmax
* ID, pulse
* RDS(ON), max @ VGS=10 V
* Qg 600 V 120 A 92 mΩ 38.6 nC
* Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT-TOP VIEW TO247 OSG55R092HF
* Absolute Maximum Ratings at Tj=25℃ unless otherwise noted PARAMETER Drain source vol

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