Datasheet4U Logo Datasheet4U.com

OSG65R900DF - Enhancement Mode N-Channel Power MOSFET

This page provides the datasheet information for the OSG65R900DF, a member of the OSG65R900AF Enhancement Mode N-Channel Power MOSFET family.

Datasheet Summary

Description

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

VDS, min@Tjmax ID, pulse RDS(ON

📥 Download Datasheet

Datasheet preview – OSG65R900DF

Datasheet Details

Part number OSG65R900DF
Manufacturer Oriental Semiconductor
File Size 908.50 KB
Description Enhancement Mode N-Channel Power MOSFET
Datasheet download datasheet OSG65R900DF Datasheet
Additional preview pages of the OSG65R900DF datasheet.

📁 Similar Datasheet

Other Datasheets by Oriental Semiconductor

Full PDF Text Transcription

Click to expand full text
, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 700 V 15 A 900 mΩ 7.
Published: |