OSG65R900AF - Enhancement Mode N-Channel Power MOSFET

General Description

OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

This device is suitable for active power factor correction and switching mode power supply applications.

VDS, min@Tjmax ID, pulse RDS(ON

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OSG65R900AF enhancement mode n-channel power mosfet by Oriental Semiconductor - Datasheet Preview

Datasheet Details

Part number	OSG65R900AF
Manufacturer	Oriental Semiconductor
File Size	908.50 KB
Description	Enhancement Mode N-Channel Power MOSFET
Datasheet	OSG65R900AF Datasheet

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Other Datasheets by Oriental Semiconductor

Part Number	Description
OSG65R900A	Enhancement Mode N-Channel Power MOSFET
OSG65R900	Enhancement Mode N-Channel Power MOSFET
OSG65R900D	Enhancement Mode N-Channel Power MOSFET
OSG65R900DF	Enhancement Mode N-Channel Power MOSFET
OSG65R900FF	Enhancement Mode N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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, OSG65R900AF, OSG65R900DF, OSG65R900FF, OSG65R900PF Enhancement Mode N-Channel Power MOSFET  General Description OSG65R900xF use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS, min@Tjmax  ID, pulse  RDS(ON), max @ VGS=10 V  Qg 700 V 15 A 900 mΩ 7.