OSG65R900 - Enhancement Mode N-Channel Power MOSFET

This page provides the datasheet information for the OSG65R900, a member of the OSG65R900A Enhancement Mode N-Channel Power MOSFET family.

Description

OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

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OSG65R900 Enhancement Mode N-Channel Power MOSFET by Oriental Semiconductor - Datasheet Preview — Datasheet preview – OSG65R900

Datasheet Details

Part number	OSG65R900
Manufacturer	Oriental Semiconductor
File Size	825.89 KB
Description	Enhancement Mode N-Channel Power MOSFET
Datasheet	OSG65R900 Datasheet
Additional preview pages of the OSG65R900 datasheet.

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Full PDF Text Transcription

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 General Description OSG65R900A,OSG65R900D,OSG65R900F Enhancement Mode N-Channel Power MOSFET OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS@Tjmax  ID  RDS(ON),max@VGS=10V 700V 5A 0.

Published: Dec 6, 2017 |