Datasheet4U Logo Datasheet4U.com

OSG65R900A - Enhancement Mode N-Channel Power MOSFET

General Description

OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

📥 Download Datasheet

Datasheet Details

Part number OSG65R900A
Manufacturer Oriental Semiconductor
File Size 825.89 KB
Description Enhancement Mode N-Channel Power MOSFET
Datasheet download datasheet OSG65R900A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
 General Description OSG65R900A,OSG65R900D,OSG65R900F Enhancement Mode N-Channel Power MOSFET OSG65R900x series use advanced GreenMOSTM technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications.  VDS@Tjmax  ID  RDS(ON),max@VGS=10V 700V 5A 0.