* Proprietary New Trench Technology
* RDS(ON),typ.=2.6 mΩ@VGS=10V
* Low Gate Charge Minimize Switching Loss
* Fast Recovery Body Diode
BVDSS 30V
RDS(ON).
* High efficiency DC/DC Converters
* Motor Bridge Switch
* Oring FET/Load Switching
G DS
Ordering Inform.
30V N-Channel MOSFET
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