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700V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=0.80 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body

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SPTP10R020HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=1.75mΩ@VGS=10V  Low Gate Charge Minimize Swit

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100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced ava

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700V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=0.80 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body

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SPTP12R15H 120V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=10.8mΩ@VGS=10V  Low Gate Charge Minimize Switch

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400V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.17 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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100V N-Channel MOSFET General Features  High speed power switching  RDS(ON),typ.=5.0mΩ@VGS=10V  Enhanced body diode dv/dt capability  Enhanced ava

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SPTD04R014E 40V N-Channel MOSFET General Features ➢ Proprietary New Trench Technology ➢ RDS(ON),typ.=1.7mΩ@VGS=10V ➢ Fast switching capability ➢ Very

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SPTP15R7D5 150V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=4.95mΩ@VGS=10V  Low Gate Charge Minimize Switch

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800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

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600V N-ch Multi-Epi Super-Junction MOSFET General Features  Multi-Epi Process  Proprietary New Super-Junction Technology  RDS(ON),typ.=0.139Ω@VGS=1

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400V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=0.17 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  F

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800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fa

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Copyrighted material licensed to Fermi National Laboratory by Thomson Scientific, Inc. (www.techstreet.com). This copy downloaded on 2015-05-12 15:14:

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K7N403601A K7N401801A www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision Hist

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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PTP03N04N 40V N-Channel MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=2.1 m Ω@VGS=10V Low Gate Charge Minimize Switching Los

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L29C525 DEVICES INCORPORATED Dual Pipeline Register L29C525 DEVICES INCORPORATED Dual Pipeline Register DESCRIPTION The L29C525 is a high-speed, l

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M54HC194 M74HC194 4 BIT PIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA

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HIGH-SPEED 16/8K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM IDT709169/59L Features ◆ True Dual-Ported memory cells which allow simultaneous acce

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