Datasheet4U.com

PJP8N60 - 600V N-Channel Enhancement Mode MOSFET

Pan Jit International

📥 Download Datasheet

PJP8N60 Datasheet Preview — Preview of PJP8N60 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: PJP8N60
Manufacturer: Pan Jit International
File Size: 195.75 KB
Datasheet: PJP8N60_PanJitInternational.pdf
Description: 600V N-Channel Enhancement Mode MOSFET

PJP8N60 Product details

Features

8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

📁 Related Datasheet

PJP15N65D - N-Channel MOSFETS (Potens semiconductor)
PJP20N65D - N-Channel MOSFETS (Potens semiconductor)

📌 All Tags

600V N-Channel Enhancement Mode MOSFET Pan Jit International

Pan Jit International PJP8N60-like datasheet

PJP8NA50 - 500V N-Channel MOSFET
PJP830 - 500V N-Channel Enhancement Mode MOSFET
PJP840 - 500V N-Channel Enhancement Mode MOSFET
PJP10N60 - 600V N-Channel Enhancement Mode MOSFET
PJP10N65 - 650V N-Channel Enhancement Mode MOSFET
PJP12N65 - 650V N-Channel Enhancement Mode MOSFET

PJP8N60 Stock/Price