2PG001 - N-channel enhancement mode IGBT

Features

s.
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V.
High speed hall time: tf = 250 nsec(typ. ).
Package.
Code TO-220F-A1.
Marking Symbol: 2PG001 Unit V V A A W W °C °C E G.
Absolute Maximum Ratings TC = 25°C Parameter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current.
Power dissipation Junction temperature Storage temperature Note).
: PW ≤ 10 us, Duty ≤ 1.0% Symbol.

2PG001 n-channel enhancement mode igbt by Panasonic - Datasheet Preview

Datasheet Details

Part number	2PG001
Manufacturer	Panasonic
File Size	283.24 KB
Description	N-channel enhancement mode IGBT
Datasheet	2PG001 Datasheet

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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits  Features  Low collector-emitter saturation voltage: VCE(sat) < 2.5 V  High speed hall time: tf = 250 nsec(typ.)  Package  Code TO-220F-A1  Marking Symbol: 2PG001 Unit V V A A W W °C °C E G  Absolute Maximum Ratings TC = 25°C Parameter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation Junction temperature Storage temperature Note) *: PW ≤ 10 us, Duty ≤ 1.0% Symbol VCES VGES IC ICP Ta = 25°C PC Tj Tstg Rating 300 ±30 30 120 40 2.0 150 –55 to +150  Pin Name 1. Gate 2. Collector 3.

Published: Apr 27, 2011 |