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2SK1867 - Silicon N-Channel Power F-MOS FET

Key Features

  • q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping s.

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Datasheet Details

Part number 2SK1867
Manufacturer Panasonic
File Size 166.11 KB
Description Silicon N-Channel Power F-MOS FET
Datasheet download datasheet 2SK1867 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu 18.0±0.5aendc Solder Dip lifecycle stage.