2SK1846 - Silicon N-Channel Power F-MOS FET

Panasonic

Key Features

q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s.

2SK1846 silicon n-channel power f-mos fet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK1846
Manufacturer	Panasonic
File Size	44.40 KB
Description	Silicon N-Channel Power F-MOS FET
Datasheet	2SK1846 Datasheet

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Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 800 ±30 ±3 ±6 20 Allowable power dissipation TC = 25°C Ta = 25°C PD 40 1.3 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 4.