Datasheet Summary
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Productnnu
18.0±0.5aendc Solder Dip lifecycle stage.
Power F-MOS FETs
Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 26ns q No secondary breakdown q Allowing to supply by the radial taping s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s...