2SK2016 - Silicon N-Channel Power F-MOS

Panasonic

Datasheet Details

q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible s.

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Published: Dec 12, 2016 |