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C5413 - Power Transistors

Key Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1700 1700 600 5 30 20 10 200 3.5 Junction temperature Storage.

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Datasheet Details

Part number C5413
Manufacturer Panasonic
File Size 52.78 KB
Description Power Transistors
Datasheet download datasheet C5413 Datasheet

Full PDF Text Transcription for C5413 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C5413. For precise diagrams, and layout, please refer to the original PDF.

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ednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie Power Transistors 2SC5413 Silicon NPN triple diffusion mesa type 20.0±0.5Product lifecyclennuaen 2.